Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
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概要
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Impurity doping and electrical properties of GaAsP layers have been studied. Samples used in this study were GaAsP heteroepitaxially grown on GaP and Si substrates by metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEGa), tertiarybutylarsine (TBAs) and phosphine (PH3) as source gases. Diethylzinc (DEZn) and tetraethyltin (TESn) were used as p- and n-type doping gases, respectively. Carrier concentrations of $5 \times 10^{19}$ cm-3 for Zn-doped GaAsP and $2 \times 10^{18}$ cm-3 for Sn-doped GaAsP were achieved. A GaAsP p-n diode was fabricated on a Si substrate, and its current–voltage characteristics were examined.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Itoh Mitsunari
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Nakamura Kazuhiro
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Nakamura Kazuhiro
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606-8501, Japan
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