Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiNx Layers
スポンサーリンク
概要
- 論文の詳細を見る
We have carried out the annealing of InN epilayers grown by molecular beam epitaxy and capped with in situ deposited SiNx in vacuum at 450–650°C. With the increase in annealing temperature, the crystallinity and carrier mobility of the InN layer clearly improved, and the residual carrier concentration of the layer decreased. Annealing without the SiNx capping layer increased the number of defects and carrier concentration, probably due to the formation of N vacancies and O incorporation.
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
-
Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
-
Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
-
Harima Hiroshi
Department Of Applied Physics Osaha University
-
Huang Wei
Department Of Biochemistry And Molecular Biology Beijing Normal University Beijing Key Laboratory
-
Yoshimoto Masahiro
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
-
Harima Hiroshi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
-
Huang Wei
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
-
Taguchi Kohshi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
-
Taguchi Koushi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
-
HUANG Wei
Department of Aeronautics and Astronautics, National Cheng Kung University
関連論文
- The value of model for end-stage liver disease and Child-Turcotte-Pugh scores over time in evaluating the prognosis of patients with decompensated cirrhosis : experience in the Chinese mainland
- Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
- High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- Comparison of Myocardial Bridging by Dual-Source CT With Conventional Coronary Angiography
- Hybrid Mode Control in Improvement to Magnetic Suspension Ball and Beam System
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- An IR Study on the Stability of Y(DPM)_3, Ba(DPM)_2 and Cu(CPM)_2 for UV Irradiation
- Influence of Ozone Concentration on the Preparation of Stoichiometric Superconducting Y-Ba-Cu-O Films by a Metalorganic Chemical Vapor Deposition Technique
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Preparation of Nearly Stoichiometric Superconducting Y-Ba-Cu-O Films by an MOCVD Technique Using Ozone
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Spectroscopic Study on a Discharge Plasma of MOCVD Source Gases for High-T_C Superconducting Films
- Preparation and Characterization of Superconducting Y-Ba-Cu-O Films by the MOCVD Technique
- Near-Band-Edge Photoluminescence of GaAs Epitaxial Layers Grown at Low Temperature
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Molecular Beam Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates
- Self-Assembling CdSe, ZnCdSe and CdTe Quantum Dots on ZnSe(100)Epilayers
- Fabrication of CdSe/ZnSe Quantum well Structures on Glass Substrates by Vacuum Evaporation
- Anti-streptococcal Cell Membrane and Anti-human Glomerular Basement Membrane Titers in Sera of Patients with Poststreptococcal Acute Glomerulonephritis and Anaphylactoid Purpura : THE 7th CONFERENCE ON PREVENTION FOR RHEUMATIC FEVER AND RHEUMATIC HEART DI
- Optical Energy Gap of the Mixed Crystal CdS_xTe_
- Phase Diagram of the CdS-CdTe Pseudobinary System
- Low Temperature Dependence of Oscillation Wavelength in GaAs_Bi_x Laser by Photo-Pumping
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Ohmic Contact Formation on p-type GaN Using Pd/Mo Electrode without Alloying Process
- Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
- Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
- Coaxial Impact Collision Ion Scattering Spectroscopy Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
- Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
- Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
- Photo-Chemical Vapor Deposition of Al_2O_3 Thin Films with High Quantum Yield
- X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
- Improvement in the Crystalline Quality of ZnSe(111) Films Grown by Molecular Beam Epitaxy Using Misoriented GaAs(111)A Substrates
- Li Planar Doping of ZnSe by Molecular Beam Epitaxy
- Study of bacterial Translocation From Gut After Paraplegia Caused by Spinal cord Injury in Rats
- Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si_Ge_x:C : Semiconductors
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
- Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering
- Direct Growth of Single-Walled Carbon Nanotube Networks on Alumina Substrate: A Novel Route to Ultrasensitive Gas Sensor Fabrication
- Epitaxial Growth of Cd_xHg_Te
- Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers
- Structual and Functional Properties of Apolipoprotein A-I Mutants
- The Conformational Change with Temperature of End Group Sequences of Low Molecular Weight Polyethylene
- Anatomical Investigation of the Sinus Node Artery Using Dual-Source Computed Tomography
- Measurement of Oscillator Strength of Several Lines of BaI
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Epitaxial Growth of CdTe by a Close-Spaced Technique
- Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN : Optical Properties of Condensed Matte
- E275 and F276 in β12-β13 Loop of Protein Phosphatase-1 Resist Mn^-Mediated Activation
- Photo-CVD of Al_2O_3 Thin Films
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- On the Dynamic Response of a Fluid-Supported Elastic Plate Subjected to a Low Velocity Projectile Impact
- Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- High Hole Mobility in GaAsxBi[x] Alloys
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
- Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target
- Scanning Photoluminescence Microscope with Sub-micron Resolution and High Optical Throughput at a Low Temperature
- Growth of Single-Walled Carbon Nanotubes Rooted from Fe/Al Nanoparticle Array
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
- Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source
- Direct Observation of Polytype Domains in GaN using a Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution
- A Set of De-Excitation Rate Coefficients for the 3s ^3P_2 and ^3P_1 Levels of Neon
- Direct Growth of Single-Walled Carbon Nanotubes on W Tip Apex
- Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
- Texture Evolution and Grain Competition in NiGe Film on Ge(001)
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiNx Layers
- Self-Assembling CdSe, ZnCdSe and CdTe Quantum Dots on ZnSe(100) Epilayers
- X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
- Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si1-xGex:C
- Measurement of Electrical Properties of GaN Thin Films Using Terahertz-Time Domain Spectroscopy
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
- PAX5 alteration-associated gene-expression signatures in B-cell acute lymphoblastic leukemia
- Increased Expression of Netrin-1 and Its Deleted in Colorectal Cancer Receptor in Human Diseased Lumbar Intervertebral Disc Compared With Autopsy Control
- Texture Evolution and Grain Competition in NiGe Film on Ge(001)
- PADI4 polymorphisms and susceptibility to rheumatoid arthritis : a meta-analysis