Ohmic Contact Formation on p-type GaN Using Pd/Mo Electrode without Alloying Process

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• KISODA Kenji

  Faculty of Education, Wakayama University

• HARIMA Hiroshi

  Department of Electronics and Information Science, Kyoto Institute of Technology

• KURIMOTO EIJI

  Department of Chemical Reaction Engineering, Faculty of Pharmaceutical Sciences, Nagoya City Univers

• Ishida Masaya

  Devices Technology Research Laboratories Sharp Corporation

• HANGYO Masanori

  Research Center for Superconducting Materials and Electronics, Osaka University

• TAKATANI Kunihiro

  Devices Technology Research Laboratories, Sharp Corporation

• Kisoda Kenji

  Faculty Of Education Wakayama University

• Kurimoto Eiji

  Department Of Applied Physics Osaka University

• Harima Hiroshi

  Department Of Applied Physics Osaha University

• Hangyo Masanori

  Research Center For Superconducting Materials And Electronics Osaka University

• TANEYA Masataka

  Devices Technology Research Laboratories, Sharp Corporation

• Taneya Masataka

  Devices Technology Research Laboratories Sharp Corporation

• Takatani Kunihiro

  Devices Technology Research Laboratories Sharp Corporation

• Harima Hiroshi

  Department Of Electronics And Information Science Kyoto Institute Of Technology

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