Terahertz-Time Domain Spectroscopic Measurement of Moderately-Doped Silicon Using InAs Emitter under Magnetic Field
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概要
- 論文の詳細を見る
The complex refractive index of silicon using terahertz-time domain spectroscopy (THz-TDS), with an InAs wafer under the influence of a magnetic field as emitter, has been studied. By applying a magnetic field on the InAs emitter, the detected temporal waveform broadens and the spectral weight of its Fourier spectrum shifts toward the low frequency region. Calculating the real ($n$) and imaginary ($\kappa$) parts of the complex refractive index of silicon, it is found that with the application of a magnetic field the plots of these quantities in the low frequency region (sub-terahertz region) are smoother than those without magnetic field. These features indicate that a significant enhancement of the signal-to-noise ($S/N$) ratio in the low frequency region can be obtained by applying a magnetic field on the InAs emitter.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Quema Alex
Research Center For Superconductor Photonics Osaka University
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NASHIMA Shigeki
Research Center for Superconducting Materials and Electronics, Osaka University
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Hangyo Masanori
Research Center For Superconducting Materials And Electronics Osaka University
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Migita Masataka
Research Center For Superconductor Photonics Osaka University
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Nashima Shigeki
Research Center for Superconductor Photonics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Quema Alex
Research Center for Superconductor Photonics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Migita Masataka
Research Center for Superconductor Photonics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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