Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
The DC resistivities of silicon germanium thin films on Si substrates by a non-contact and non-destructive technique using terahertz time domain spectroscopy (THz-TDS) agree with the values obtained by the four-point probe measurement In the present experiment the mobility has not been precisely determined owing to the limitation of the frequency range in our equipment (from 0.1 to 1.5 THz). However, when the mobility becomes large enough this method will be highly useful in evaluating semiconductor thin films, since the method gives the same data as those from Hall measurement without sample processing or electrode contact to sample.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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HANGYO Masanori
Research Center for Superconducting Materials and Electronics, Osaka University
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Hangyo Masanori
Research Center For Superconductor Photonics Osaka University
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Hangyo Masanori
Research Center For Superconducting Materials And Electronics Osaka University
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NAGASHIMA Takeshi
Research Center for Superconductor Photonics, Osaka University
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TABATA Jimpei
Matsushita Kotobuki Electronics Industries, Ltd.
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HIRANAKA Kouichi
Matsushita Kotobuki Electronics Industries, Ltd.
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SAITOH Tohru
Matsushita Electronics Industrial Co., Ltd.
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Tabata Jimpei
Matsushita Kotobuki Electronics Industries Ltd.
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Hiranaka Kouichi
Matsushita Kotobuki Electronics Industries Ltd.
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Nagashima Takeshi
Research Center For Superconductor Photonics Osaka University
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Saitoh Tohru
Matsushita Electronics Industrial Co. Ltd.
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