Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
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概要
- 論文の詳細を見る
Low-temperature-grown GaAs homo-epitaxial layers were studied by Raman scattering and time-resolved photoreflectance techniques. Raman spectral profiles, polarization properties and lifetimes of photo-induced carriers depend strongly on growth conditions and post annealing. The experimental results showed that heavily defective layers were formed in as-grown layers, while post-annealed layers were less defective and consisted of partially misoriented crystallites or polycrystals. The carrier lifetime was short and the magnitude of the optical response was small in defective layers grown at relatively low temperatures, while the optical response was increased by annealing and by increasing the growth temperature. Of the samples tested, GaAs layers grown at 200–250° C and post-annealed layers gave a lifetime of 0.3 ps with relatively high optical response.
- 1996-12-15
著者
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Abe Hajime
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Kanamoto Kyozo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sakai Kiyomi
Kansai Advanced Research Center Communication Research Laboratory
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Tani Masahiko
Kansai Advanced Research Center Communication Research Laboratory
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nakashima Shin-ichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Kanamoto Kyozo
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Harima Hiroshi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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Abe Hajime
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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Tokuda Yasunori
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Abe Yuji
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Nakashima Shin-ichi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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