Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-11-15

著者

• Tokuda Y

  Mitsubishi Electric Corp. Hyogo Jpn

• Tokuda Yasunori

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tokuda Yasunori

  Central Research Laboratory Mitsubishi Electric Corporation

• MARUNO Shigemitsu

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Yamamoto Kazuma

  Sakai Research Center Air Water Inc.

• Furukawa T

  Sci. Univ. Tokyo Tokyo Jpn

• NAKAHATA Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• FURUKAWA Taisuke

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• SATOH Shinichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• INAGAKI Toru

  Sakai Research Center, Air Water Inc.

• KIYAMA Hiromi

  Sakai Research Center, Air Water Inc.

• MARUNO Shigemitsu

  The Institute of Scientific and Industrial Research, Osaka University

• Nakahata T

  Mitsubishi Electric Corp. Hyogo Jpn

• Satoh Shiro

  Semiconductor Research Laboratory Clarion Co. Ltd.

• Inagaki Toru

  Sakai Research Center Air Water Inc.

• Kiyama Hiromi

  Sakai Research Center Air Water Inc.

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Maruno S

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Maruno Shigemitsu

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Furukawa Tasuke

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Furukawa Takeo

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• Maruno Shigemitsu

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation,

• Satoh Shinichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation,

関連論文

• Pyroelectric Imaging on the Ferroelectric GASH[C (NH_2)_3Al (SO_4)_2・6H_2O]
• Measurements of Nonlinear Dielectricity in Ferroelectric Polymers
• Large Dielectric Relaxations in an Alternate Copolymer of Vinylidene Cyanide and Vinyl Acetate
• Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba_Sr_)TiO_3/Pt Capacitor
• Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
• Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
• Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
• First Operation of AlGaN Channel High Electron Mobility Transistors
• First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
• Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy
• Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H
• Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)-2×1
• Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface
• Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
• Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
• Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
• On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
• Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
• Tunable Optical Stop Band and Reflection Peak in Synthetic Opal Infiltrated with Liquid Crystal and Conducting Polymer as Photonic Crystal
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
• Nonlinear Dielectric Investigation of Trifluoroethylene-Rich Copolymers of Vinylidene Fluoride
• Antiferroelectric - Like Behavior of Vinylidene Fluoride/Trifluoroethylene Copolymers with Low Vinylidene Fluoride Content
• Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
• Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
• Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
• Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
• Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
• Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
• Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
• Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
• Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
• Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition ( Plasma Processing)
• Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition
• Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
• Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD
• Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
• Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
• Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
• AC Measurements on Silver Photodoping into Ge_S_ Glass
• Nonlinear Dielectric Relaxations in a Vinylidene Cyanide / Vinyle Acetate Copolymer
• Interrelation of Si Internal Stress and Si/SiO_2 Interface Stress
• Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Tunable Optical Stop Band Utilizing Thermochromism of Synthetic Opal Infiltrated with Conducting Polymer
• A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
• Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
• Bias Effect on the Microstrueture and Diffusion Barrier Capability of Sputtered TiN and TiO_xN_y Films
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Absorbed-Current Polarization Detector with Fe(110) Target
• First Operation of AlGaN Channel High Electron Mobility Transistors
• Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
• Optical Phased Array Functions in Double-Layered Metallic Plate Systems with Artificially Modulated Slit Arrays
• Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
• Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
• X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
• Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
• Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

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