Interrelation of Si Internal Stress and Si/SiO_2 Interface Stress

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概要

• 論文の詳細を見る

• Both Si/SiO_2 interface stress (σ_<int>) and Si internal stress (σ_<si>) of identical CZ-Si wafers with oxidized SiO_2 film are estimated and analyzed. In the oxidation temperature from 1000 to 1100℃, temperature dependence of σ_<int> and σ_<si> is similar in the small warpage region, but quite different in the large warpage region. Furthermore, it is observed that the values of σ_<int> are one order of magnitude larger than those of σ_<si>. These experiments suggest that the relaxation phenomenon occurs near Si/SiO_2 interface, and the relaxation mechanism in the small warpage region differs from that in the large warpage region.

• 社団法人応用物理学会の論文
• 1984-09-20

著者

• Satoh Shiro

  Semiconductor Research Laboratory Clarion Co. Ltd.

• IECHI Hiroyuki

  Semiconductor Research Laboratory, Clarion Co., Ltd.

• Iechi Hiroyuki

  Semiconductor Research Laboratory Clarion Co. Ltd.

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