Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-10-01

著者

• TANIMURA Junji

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Tokuda Y

  Mitsubishi Electric Corp. Hyogo Jpn

• Tokuda Yasunori

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tokuda Yasunori

  Central Research Laboratory Mitsubishi Electric Corporation

• MARUNO Shigemitsu

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Tanimura Junji

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tanimura Junji

  Advanced Technology R&d Center Mitsubishi Electric Corp

• Furukawa T

  Sci. Univ. Tokyo Tokyo Jpn

• NAKAHATA Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• FURUKAWA Taisuke

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• MARUNO Shigemitsu

  The Institute of Scientific and Industrial Research, Osaka University

• Nakahata T

  Mitsubishi Electric Corp. Hyogo Jpn

• Satoh Shiro

  Semiconductor Research Laboratory Clarion Co. Ltd.

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Maruno S

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Maruno Shigemitsu

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Furukawa Takeo

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• Maruno Shigemitsu

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center. Mitsubishi Electric Corporation

• Furukawa Taisuke

  Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation,

関連論文

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• Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
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• Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
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• Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

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