Bias Effect on the Microstrueture and Diffusion Barrier Capability of Sputtered TiN and TiO_xN_y Films
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概要
- 論文の詳細を見る
The microstructure of TiN and TiO_xN_y films deposited on Si(100) substrates in an Ar-N_2 or an Ar-N_2-O_2 gas mixture was evaluated with a high-resolution field emission scanning electron microscope (FE-SEM). The TiN films deposited under an applied negative substrate bias have an extremely dense microstructure with hillocks on the film surface caused by the high compressive stress. The addition of oxygen modifies the microstructure of TiN film, i.e., the hillocks disappeared on the surface of TiO_xN_y by virtue of the stress relaxation effect. It has been found through the experiment of internal thermal diffusion by annealing Al/TiN (or TiO_xN_y)/Si in a vacuum that the diffusion barrier performance of the films is associated with the microstructure and internal stress in addition to the oxygen content itself.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Jin P
National Industrial Res. Inst. Nagoya Nagoya Jpn
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MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno Shigeo
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Jin Ping
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Maruno Shigemitsu
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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