A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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