Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YAMAKAWA Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
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SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Nakahata T
Mitsubishi Electric Corp. Hyogo Jpn
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NISHIOKA Yasutaka
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nishioka Yasutaka
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Yamakawa Shinya
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Furukawa Takeo
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Maruno Shigemitsu
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Nakahata Takumi
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Yamakawa Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
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