Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Yanagisawa H
Nhk Sci. And Technical Res. Lab. Tokyo Jpn
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Yanagisawa H
Kitami Inst. Technol. Kitami Jpn
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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ABE Yoshio
Department of Materials Science, Kitami Institute of Technology
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SASAKI Katsutaka
Department of Materials Science, Kitami Institute of Technology
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SHINKAI Satoko
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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YANAGISAWA Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Shinkai S
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Shinkai Satoko
Research Fellow Of The Japan Society For The Promotion Of Science
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Shinkai Satoko
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Abe Yoshio
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Department of Control Engineering, Takuma National College of Technology, 551 Koda, Takuma-cho, Kagawa 769-1192, Japan
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