Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
-
Yanagisawa H
Nhk Sci. And Technical Res. Lab. Tokyo Jpn
-
Yanagisawa H
Kitami Inst. Technol. Kitami Jpn
-
KAWANAKA Satoshi
Central Research Laboratory, Hitachi Ltd.,
-
TANAKA Toshiaki
Central Research Laboratory, Hitachi Ltd.,
-
YANAGISAWA Hironori
Central Research Laboratory, Hitachi Ltd.,
-
YANO Shinichiro
Central Research Laboratory, Hitachi Ltd.,
-
MINAGAWA Shigekazu
Central Research Laboratory, Hitachi Ltd.,
-
Yano Shinichiro
Central Research Laboratory Hitachi Ltd.
-
Kawanaka Satoshi
Central Research Laboratory Hitachi Ltd.
-
Minagawa S
Hitachi Ltd. Tokyo Jpn
-
Minagawa Shigekazu
Central Research Laboratory Hitachi Lid.
-
MINAGAWA Shoichi
Semiconductor Research Laboratory, Clarion Co., Ltd.
-
Tanaka Toshiaki
Central Research Laboratory Hitachi Ltd.
関連論文
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Preparation of Low-Resistivity α-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
- Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
- The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
- High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
- SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration : Communication Devices and Materials
- Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure : C-5: ACOUSTIC DEVICES
- Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- OMVPE of Gallium Arsenide Using an Adduct Compound
- Equilibrium Computation for the Vapor Growth of In_xGa_P Crystals
- Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
- Minority-Carrier Response in MIS Surface-Acoustic-Wave Convolver