The Γ_c-Γ_v Transition Energies of Al_xIn_<1-x>P Alloys

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The transition energies at 20 K for the Γ_<6c>-Γ_<7v> (electron-heavy hole) (E_s^<hh>(x)) and for the Γ_<6c_>-Γ_<6v(1)> (electron-light hole) (E_s^<lh>(x)) of strained and disordered Al_xIn_<1-x>P (0.43 &≤ x &≤ 0.62) on GaAs substrates were measured using a photoreflectance method. They are expressed as E_s^<hh>(x)=1.488(±0.020)+2.30(±0.04)・x, and E_s^<lh>(x)=1.738(±0.030)+1.81(±0.06)・x (eV). The Γ_<6c>-Γ_<8v> transition energies for unstrained layers (E_u(x)) were also measured at 20 K as E_u(x)=1.418(±0.007)+2.42(±0.01)・x (eV). The unstrained samples were InP, Al_<0.53>In_<0.47>P on a GaAs substrate and Al_<0.73>In_<0.27>P on a GaAs_<0.61>P_<0.39> substrate. The shift of the transition energies due to stress was obtained from these transition energies. The hydrostatic and shear deformation potentials for Al_xIn_<1-x>P alloys were calculated to be -5.23(±0.60) eV and -1.67(±0.26) eV by comparing the experimental results and the theoretical formulae.
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1997-11-15