Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-01-15
著者
-
佐々木 克孝
Department Of Materials Science Kitami Institute Of Technology
-
阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
-
Yanagisawa H
Nhk Sci. And Technical Res. Lab. Tokyo Jpn
-
Yanagisawa H
Kitami Inst. Technol. Kitami Jpn
-
Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
-
ABE Yoshio
Department of Materials Science, Kitami Institute of Technology
-
SASAKI Katsutaka
Department of Materials Science, Kitami Institute of Technology
-
MIREBA Kazuhiro
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
-
SHINKAI Satoko
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
-
YANAGISAWA Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
-
Shinkai S
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
-
Shinkai Satoko
Research Fellow Of The Japan Society For The Promotion Of Science
-
Shinkai Satoko
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
-
Sasaki Kimihiro
Graduate School Of Natural Science And Technology Kanazawa University
-
Abe Yoshio
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
-
Sasaki Koh
Institute For Materials Research Tohoku University
-
Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
-
Mireba Kazuhiro
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
-
Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
-
Shinkai Satoko
Department of Control Engineering, Takuma National College of Technology, 551 Koda, Takuma-cho, Kagawa 769-1192, Japan
関連論文
- C-6-3 化学量論的なTaN薄膜の(100)Si上での室温エピタキシャル成長(C-6.電子部品・材料,エレクトロニクス2)
- Ta-Zr合金による陽極酸化膜キャパシタの電気的特性に及ぼす熱処理温度と酸化膜厚低減の影響
- C-6-8 Ta-Zr合金による熱的に安定な高誘電率陽極酸化膜キャパシタの作製
- (III)Si上にエピタキシャル成長させた(III)HfN膜と(III)Cu/(III)HfN積層膜のAFM観察
- Al_3Ta陽極酸化膜キャパシタの作製とその耐熱性
- (111)Si上(111)Cu/(111)HfN2層膜の連続エピタキシャル成長と(111)HfN膜の拡張バリア特性
- CPM2000-90 NbドープSrTiO_3薄膜の膜質に及ぼすMgO基板表面処理とポストアニールの影響
- CPM2000-83 薄いZrN/Zr2層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性
- CPM2000-76 導電性RhO2薄膜の電気特性に及ぼす熱処理の影響
- CPM2000-72 WOx薄膜の形成過程とその電気及び光学特性
- Preparation of Hydrogen-Containing Ta_2O_5 Thin Films by Reactive Sputtering Using O_2 + H_2O Mixed Gas
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta_2O_5 Films
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N_2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Preparation of Low-Resistivity α-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Capacitor Property and Leakage Current Mechanism of ZrO_2 Thin Dielectric Films Prepared by Anodic Oxidation
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- 超高真空系で作製したMo/(100)Si系のシリサイド形成初期過程
- Alメタライゼーション系におけるAl_12Mo/Mo積層膜の拡散バリヤ効果
- (200)TiN高配向膜上への(111)Al高配向成長に及ぼすAl_3Ti中間介在層の影響
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy
- Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers on SiO_2
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- 低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構
- バルブメタルの金属間化合物のアノード酸化とコンデンサへの応用
- Al_3Hf金属間化合物の陽極酸化膜による高耐熱, 高信頼性薄膜キャパシタの検討
- Al_3Hf陽極酸化膜キャパシタの電気的特性と耐熱特性
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Sequential Single-Oriented Growth of(111)Cu/(111)HfN/(002)Hf Trilayered Film on(001)Si and Its Thermal Stability
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- CPM2000-82 (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
- Al_3Zr金属間化合物膜の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製
- Alメタライゼーション系へのAl_3Hf/Hf積層膜の拡散バリヤとしての適用
- Al_3Hf金属間化合物膜の結晶化過程と電気的特性
- n-(001)Si上への単配向Hf膜の作製条件の検討
- 反応性スパッタリング法によるRuO_2薄膜の作製とその電気特性
- Al-Si間におけるAl_3Zr/Zr積層膜の拡散バリヤ効果について
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
- Oriented Growth of Cu(110) on YSi_(1100)/Si(100) and Diffusion Behavior in Copper Silicide Formation
- Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu_9Al_4 Intermetallic Compound Film and Si
- Influence of Sputtering Parameters on the Formation Process of High-Quality and Low-Resistivity HfN Thin Film
- Preparation of CU_9Al_4 Intermetallie Compound Films as a Metallization Material for LSI Technology
- Interfacial Solid-Phase Reaction in Al/HfN/Hf/Si Contact System during Postmetallization Annealing
- Formation Process and Electrical Property of IrO_2 Thin Films Prepared by Reactive Sputtering
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- (001)Siと(111)Si上へのAl/HfN積層膜の連続単配向成長条件の検討
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの耐熱特性
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの熱安定性
- A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
- CPM2000-71 Ta窒化物のTa-Al化合物膜への代替による薄膜キャパシタの容量低減の抑制効果
- Ta_2N陽極酸化膜キャパシタの耐熱要因と薄膜化の検討
- Ta_2N 陽極酸化膜キャパシタの耐熱性と酸化膜厚
- Effects of Substrate Temperature during Phosphor Layer Deposition on Luminance of SrS:Ce Blue-Green-Emitting Thin-Film Electroluminescent Devices
- Effects of Oxygen in CaS:Eu Active Layers on Emission Properties of Thin Film Electroluminescent Cells
- Electroluminescence in CaO:Eu Thin Film
- Distribution of Free Volume and Dielectric Relaxation due to Segmental Motion of Amorphous Chains in Chlorinated Poly(ethylene)
- Effect of the Distribution of Free Volume on the β Relaxation in Poly : Vinylidene Fluoride
- Mechanical Relaxation of Poly (Vinylidene Fluoride) and Copolymer of Vinylidene Fluoride and Tetrafluoroethylene in α and β Relaxation Regions