Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
-
阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
-
Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
-
Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
-
Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
-
MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
-
Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
-
NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
-
Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
-
SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
-
Nakahata T
Mitsubishi Electric Corp. Hyogo Jpn
-
Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
-
Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
-
Shiozawa Katsuomi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
-
Furukawa Takeo
Advanced Technology R&D Center. Mitsubishi Electric Corporation
-
Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
-
Maruno Shigemitsu
Advanced Technology R&D Center. Mitsubishi Electric Corporation
-
OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
-
Nakahata Takumi
Advanced Technology R&D Center. Mitsubishi Electric Corporation
-
Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
-
Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
関連論文
- SPR免疫センサとマイクロチャネルセルを用いた環境ホルモン類の多成分同時検出システムの開発
- Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
- 20pTH-8 変調ドープ n-CdTe/(Cd, Mg, Mn)Te 量子井戸における磁気ルミネッセンスの微細構造
- 30pYH-9 変調ドープ n-CdTe/(Cd, Mg, Mn) Te 量子井戸におけるν∿1 近傍の PL スペクトル異常
- 20pTH-7 GaAs/AlAs 隣接閉じ込め構造からの励起子磁気発光 II
- 20pTH-6 半導体ナノ構造における電子・正孔空間分離型励起子からの磁気発光ダイナミクス
- 30pZB-12 高周波電気伝導測定法を用いた超強磁場中グラファイトの電子状態 III
- WO_3 ゲート FET デバイスの NO_2 検知特性
- Li_2CO_3-BaCO_3 補助相を接合した NASICON ベースの室温作動型 CO_2 センサ
- 糖尿病診断を目指した呼気中アセトン検出用薄膜型酸化物半導体ガスセンサ