Sugihara Kohei | Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.

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概要

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著作論文

Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution
Fabrication of Micro-Marks for Electron-Beam Lithography
Fabrication Process of Character Projection Mask for EB Lithography
Recovery of SEM Image by In-Situ Cleaning of Contaminated Objective Aperture
Reduction of Electron Beam Drift Caused by Deflecting Electrode by Downflow Cleaning Process
Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation
Contamination Charging up Effect in a Variably Shaped Electron Beam Writer
A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match
Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon
Fracto-Emission from Glass Fibre Reinforced Plastics at 170-200 K : Exoemission Associated with Mechanical Treatments
Measurements of Photostimulated Electron Emission from Super conducting Metals at 9-300 K : Exoemission Mechanism and Related Phenomena

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