Abe Yuji | Advanced R&d Technology Center Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shiozawa Katsuomi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa A
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
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Nakahata T
Mitsubishi Electric Corp. Hyogo Jpn
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa Takeo
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Nakahata Takumi
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Abe Hajime
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Kanamoto Kyozo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Sakai Kiyomi
Kansai Advanced Research Center Communication Research Laboratory
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Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tani Masahiko
Kansai Advanced Research Center Communication Research Laboratory
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Yagyu Eiji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nakashima Shin-ichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Tokuda Yasunori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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HARIMA Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology
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KIMURA Kozo
Optoelectronics Joint Research Laboratory
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Abe Hajime
Department of Cardiology, Sakakibara Heart Institute
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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Pan Ci-ling
Department Of Physics Tunghai University
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Kanamoto K
Mitsubishi Electric Corp. Hyogo Jpn
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Kanamoto Kyozo
Femtosecond Technology Research Association (festa)
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NAKASHIMA Shin-ichi
Department of Applied Physics,Osaka University
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Eimori Takahisa
Ulsi Development Center Mitsubishi Electric Corporation
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MIYAMARU Fumiaki
Department of Physics, Faculty of Science, Shinshu University
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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YAMAKAWA Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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SHIRAHATA Masayoshi
ULSI Development Center, Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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TANI Masahiko
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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SAKAI Kiyomi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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YAGYU Eiji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIARA Kiichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Matsumoto Takuji
Ulsi Development Center Mitsubishi Electric Corporation
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Okumura Yoshihiro
Research Institute Of Electronics Shizuoka University
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Sakai Kiyomi
Kansai Advanced Research Center Communications Research Laboratory The Ministry Of Posts And Telecom
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OKUMURA Yoshinori
ULSI Laboratory, Mitsubishi Electric Corporation
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Tokuda Yasunori
Department Of Bioscience And Biotechnology Faculty Of Engineering Okayama University
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TAKANO Keisuke
Institute of Laser Engineering, Osaka University
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HANGYO Masanori
Institute of Laser Engineering, Osaka University
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Ota Kazunobu
Ulsi Development Center Mitsubishi Electric Corporation
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Abe H
Semiconductor Technology Development Group Semiconductor Solutions Network Company Sony Corporation
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Sakai K
宮崎大
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Oda Hidekazu
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Murakami Taka-aki
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Harima H
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Sayama Hirokazu
Ulsi Development Center Mitsubishi Electric Corporation
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Pan Ci‐ling
Department Of Physics And Institute Of Photonics Technologies National Tsing-hua University
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KAWABATA Taku
Institute of Laser Engineering, Osaka University
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HSIEH Cho-Fan
Department of Electrophysics, National Chiao Tung University
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AKIYAMA Koichi
Advanced R&D Technology Center, Mitsubishi Electric Corporation
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PAN Ru-Pin
Department of Electrophysics, National Chiao Tung University
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NANJO Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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INOUE Akira
Microwave Device Development Department, Mitsubishi Electric Corporation
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ISHIKAWA Takahide
Microwave Device Development Department, Mitsubishi Electric Corporation
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MATSUDA Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation
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NISHIOKA Yasutaka
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIHARA Kouhei
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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OISHI Toshiyuki
Information Technology R&D Center, Mitsubishi Electric Corporation
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MAEDA Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Hangyo M
Research Center For Superconductor Photonics Osaka University
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Hangyo Masanori
Institute Of Laser Engineering Osaka University
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Hangyo Masanori
Department Of Applied Physics Osaka University
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YASUMURA Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Nishioka Yasutaka
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yasumura Kenji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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Okumura Y
Minolta Co. Ltd. Osaka Jpn
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Miyoshi Hirokazu
徳島大学医学部
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Akiyama Koichi
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Miyamaru Fumiaki
Department Of Physics Shinshu University
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Miyamaru Fumiaki
Department Of Physics Faculty Of Science Shinshu University
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Takano Keisuke
Institute Of Laser Engineering Osaka University
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Pan Ru-pin
Department Of Electrophysics National Chiao Tung University
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Kawabata Taku
Institute Of Laser Engineering Osaka University
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Hsieh Cho-fan
Department Of Electrophysics National Chiao Tung University
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Pan Ci-ling
Department Of Physics And Institute Of Photonics Technologies National Tsing-hua University
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Nakashima S
Ntt Telecommunications Energy Lab. Atsugi Jpn
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Yamakawa Shinya
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shirahata M
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata Masayoshi
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Oda Hidekazu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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ABE Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ABE Yuji
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Eimori Takahisa
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Shiozawa Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Nakatsuka Shigenori
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Maegawa Shigeto
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Sugihara Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sugihara Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Oishi Toshiyuki
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Miura Naruhisa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Miura Naruhisa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Takeuchi Misaichi
Nanoscience Development and Support Team, RIKEN, Wako, Saitama 351-0198, Japan
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Ozeki Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Ozeki Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nanjo Takuma
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nanjo Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Matsumoto Takuji
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Sayama Hirokazu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nishimura Tadashi
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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YASUMURA Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURAKAMI Taka-aki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Inoue Akira
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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SUGIHARA Kouhei
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Pan Ci-Ling
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Maeda Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Yamakawa Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Kanamoto Kyozo
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Harima Hiroshi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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Abe Hajime
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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Tokuda Yasunori
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Abe Yuji
Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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Nakashima Shin-ichi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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Matsuda Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Motoya Tsukasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Imai Akihumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suzuki Yosuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
著作論文
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- First Operation of AlGaN Channel High Electron Mobility Transistors
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate