Kanamoto K | Mitsubishi Electric Corp. Hyogo Jpn

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概要

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著作論文

DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices(Photonic Crystals and Their Device Applications)
Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
Low-Pressure OMVPE of GaAs Using Triethylgallium
Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption(Ultrafast Photonics)
Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells

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