Horiguchi Seiji | Ntt Basic Research Laboratories

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概要

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著作論文

DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
Threshold Voltage of Si Single-Electron Transistor
Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
Low-Pressure OMVPE of GaAs Using Triethylgallium
Phonon-Limited Electron Mobility in Ultra-Thin SOI MOSFETs
Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
Threshold Voltage of Si Single-Electron Transistor
Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors

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