NAMATSU Hideo | NTT Basic Research Laboratories

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著作論文

Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Line-Edge Roughness: Characterization and Material Origin
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
Three-Dimensional Nanofabrication with 10-nm Resolution
Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
Edge-Enhancement Writing for Electron Beam Nanolithography
Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
Binary-Solvent Developer for Cross-Linked Positive-Tone Resists
A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
Three-Dimensional Nanofabrication with 10-nm Resolution
Line-Edge Roughness: Characterization and Material Origin
The Impact of Supercritical Fluoro-Compounds on Lithography Use
Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
Supercritical Improvement of Resist Patterns by Introducing Functional Molecules
Electron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Electrons
Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology

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