YAMAGUCHI Hiroshi | NTT Basic Research Laboratories
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概要
関連著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories
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OKAMOTO Hajime
NTT Basic Research Laboratories
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ONOMITSU Koji
NTT Basic Research Laboratories
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Hibino Hiroki
Ntt Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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MAHBOOB Imran
NTT Basic Research Laboratories
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
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KAGESHIMA Hiroyuki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Ono Yukinori
NTT Basic Research Laboratories
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Nagase Masao
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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YAMAZAKI Kenji
NTT Basic Research Laboratories
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Kageshima Hiroyuki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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MIYASHITA Sen
NTT Advanced Technology Corp.
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Yamaguchi Hiroshi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Inokawa H
Research Institute Of Electronics Shizuoka Univ.
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Fujiwara Akira
NTT Basic Research Laboratories, NTT Corporation
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NISHIGUCHI Katsuhiko
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara A
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A
Ntt Corp. Atsugi Jpn
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Okamoto Hajime
Ntt Basic Research Laboratories Ntt Corporation
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Koechlin Charlie
Ntt Basic Research Laboratories Ntt Corporation
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Miyashita S
Ntt Advanced Technology Corp.
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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Sogawa Tetsuomi
Ntt Basic Research Laboratories
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Nagase Masao
Faculty of Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Tamaru Kojiro
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nonaka Keiichiro
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories, NTT Corporation
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Ishihara Sunao
Department of Engineering Synthesis, School of Engineering, The University of Tokyo, Tokyo 113-8654, Japan
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Inokawa Hiroshi
Research Institute of Electronics, Shizuoka University
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TORIMITSU Keiichi
NTT Basic Research Laboratories
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Goto Touichiro
Ntt Basic Res. Lab. Kanagawa Jpn
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Sekine Yoshiaki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamaguchi Toru
Ntt Basic Research Laboratories Ntt Corporation
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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KOECHLIN Charlie
NTT Basic Research Laboratories, NTT Corporation
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Houlet Lionel
Ntt Basic Research Laboratories Ntt Corporation
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Hirono Shigeru
Ntt Afty Corporation
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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YAMADA Takumi
NTT Basic Research Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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AKAZAKI Tatsushi
NTT Basic Research Laboratories, NTT Corporation
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UEKI Mineo
NTT Electronics Techno Corporation
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Yamazaki Kenji
Ntt Basic Research Laboratories Ntt Corporation
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Yamada T
Department Of Electrical And Electronics Engineering Sophia University
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Yamamoto Hideki
Ntt Basic Research Laboratories
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MIYASHITA Sen
NTT-AT
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DREYFUS Remi
NTT Basic Research Laboratories, NTT Corporation
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Dreyfus Remi
Ntt Basic Research Laboratories Ntt Corporation:ecole Superieure De Physique Et De Chimie Industriel
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Yamaguchi H
Ntt Basic Research Laboratories
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Okamoto Hajime
Department Of Materials Science And Engineering Waseda University
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Gotoh Hideki
Ntt Basic Research Laboratories
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Sanada Haruki
Ntt Basic Research Laboratories Ntt Corporation
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Kanisawa Kiyoshi
Ntt Basic Research Laboratories
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Ishihara Sunao
The University Of Tokyo
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Mitsuhara Manabu
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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WU Nan-Jian
Institute of Semiconductors, Chinese Academy of Sciences
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka University
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GOTO Touichiro
NTT Basic Research Laboratories
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Torimitsu Keiichi
Nntt Corp. Kanagawa Jpn
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Goto Touichiro
Nntt Corp. Kanagawa Jpn
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TAKAHASHI Yasuo
Graduate School of Information Science and Technology, Hokkaido University
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MIHARA Hisakazu
Department of Bioengineering, Graduate School of Bioscience and Biotechnology, Tokyo Institute of Te
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Inokawa Hiroshi
Shizuoka Univ. Hamamatsu Jpn
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Yamada Tetsuo
Department of Human Pathology, Tokyo Medical and Dental University
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Takahashi Y
Hokkaido Univ. Sapporo‐shi Jpn
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Nagase Masao
Nippon Telegraph And Telephone Corp. Kanagawa Jpn
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Mahboob Imran
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
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Takahashi Y
Osaka University
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HIRONO Shigeru
NTT Afty Engineering Corporation
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ZHANG Wancheng
NTT Basic Research Laboratories, NTT Corporation
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Wu Nan-jian
Institute Of Semiconductor Chinese Academy Of Science
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Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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Saito K
Department Of Materials Technology Chiba University
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Zhang Wancheng
Ntt Basic Research Laboratories Ntt Corporation:institute Of Semiconductor Chinese Academy Of Scienc
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USUI Kenji
Department of cardiology Surugadai Nihon Univ.Hospital
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Suzuki Kenji
Institute For Materials Research Laboratory Tohoku University
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HORIKOSHI Yoshiji
School of Science and Engineering, Waseda University
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NAMATSU Hideo
NTT Basic Research Laboratories
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Wang Ying-dan
Ntt Basic Research Laboratories
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Suzuki K
Central Research Laboratory Alps Electric Co. Ltd.
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HOMMA Yoshikazu
NTT Basic Research Laboratories
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Suzuki Kenshu
Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine
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Takahashi Yasuo
Graduate School Of Information Science And Technology Hokkaido Univ.
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MIYAZAKI Hiroshi
Department of Internal Medicine III, Kurume University School of Medicine
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NAKANISHI Tsutomu
Department of Physics, Nagoya University
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Semba Kouichi
NTT Basic Research Laboratories
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Okamoto Hajime
Department Of Materials Sciences Waseda Universit
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TAKEDA Kyozaburo
Department of Materials Science and Engineering, Waseda University
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OBATAYA Ikuo
Department of Bioengineering, Tokyo Institute of Technology
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AZEHARA Hiroaki
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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MIZUTANI Wataru
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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HASHIMOTO Katsushi
NTT Basic Research Laboratories, NTT Corporation
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Kometani Reo
Graduate School Of Engineering The University Of Tokyo
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Usui Kenji
Department Of Bioengineering Tokyo Institute Of Technology
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Hashimoto Katsushi
Ntt Basic Research Laboratories Ntt Corporation
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KAMADA Takehito
NTT Basic Research Laboratories, NTT Corporation
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ITO Daisuke
NTT Basic Research Laboratories, NTT Corporation
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SOGAWA Tetsuomi
NTT Basic Research Laboratories, NTT Corporation
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Kamada Takehito
Ntt Basic Research Laboratories Ntt Corporation
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Takahashi Y
Graduate School Of Information Science And Technology Hokkaido Univ.
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Ishihara Sunao
Graduate School Of Engineering The University Of Tokyo
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Froitier Charline
NTT Basic Research Laboratories, NTT Corporation
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Mihara Hisakazu
Department Of Applied Chemistry Faculty Of Engineering Nagasaki University
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Yamazaki Kenji
Ntt Corp. Kanagawa Jpn
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ROSLUND Joran
NTT Basic Research Laboratories
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SAITO Ken
NTT Basic Research Laboratories
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SUZUKI Kyoichi
NTT Basic Research Laboratories
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Suzuki K
Department Of Information And Communication Technology Tokai University
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Jourdan Nicolas
Ntt Basic Research Laboratories
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Ueki Mineo
Ntt Electrical Communications Laboratories
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Singh Vijay
Ntt Basic Research Laboratories Ntt Corporation
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Oyama Norihisa
Department Of Applied Physics And Phisico-infomatics Keio University
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Suzuki K
東京大学大学院農学生命科学研究科獣医病理学研究室
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SANTOS Paulo
Paul Drude Institute
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Mizutani Wataru
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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TAWARA Takehiko
NTT Basic Research Laboratories, NTT Corporation
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FURUKAWA Kazuaki
NTT Basic Research Laboratories
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Hirayama Yoshiro
Ntt Basic Research Laboratories Ntt Corporation
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Azehara Hiroaki
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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Azehara Hiroaki
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Takahashi Yasuo
The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir
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Obataya Ikuo
Department Of Bioengineering Faculty Of Bioscience And Biotechnology Tokyo Institute Of Technology
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Onomitsu Koji
Ntt Basic Research Laboratory
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Akazaki Tatsushi
Ntt Basic Research Laboratories Ntt Corporation
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Akazaki Tatsushi
Ntt Basic Research Laboratories
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Tawara Takehiko
Ntt Basic Research Laboratories Ntt Corporation
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Tanabe Shinichi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Takeda Kyozaburo
Department Of Materials Science And Engineering School Of Science And Engineering Waseda University
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Kanisawa K
Ntt Basic Research Laboratories
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Froitier Charline
Ntt Basic Research Laboratories Ntt Corporation
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Watanabe Takayuki
NTT Basic Research Laboratory, Atsugi, Kanagawa 243-0198, Japan
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Suzuki Daiichi
School Of Science And Engineering Waseda University
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Takahashi Yasuo
Faculty Of Pharmaceutical Sciences Tokyo University Of Science
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Yamada Tetsuo
Department Of Applied And Environmental Chemistry Kitami Institute Of Technology
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Watanabe Takayuki
Ntt Basic Research Laboratory
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Prinz Victor
Institute Of Semiconductor Physcs
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Seleznev Vladimir
Institute of Semiconductor Physics, Acad. Lavrentyev Ave. 13, 630090 Novosibirsk, Russia
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Seleznev Vladimir
Institute Of Semiconductor Physcs
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Yamaguchi Hiroshi
Ntt Basic Research Laboratory
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Ito Daisuke
Ntt Basic Research Laboratories Ntt Corporation
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Miyazaki Hiroshi
Department Applied Physics Tohoku University
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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Krockenberger Yoshiharu
Ntt Basic Research Laboratories Ntt Corporation
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Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
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Tomita Takuro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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O Ryong-Sok
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Iwamoto Atsushi
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nishi Yuki
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Funase Yuya
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yuasa Takahiro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nagase Masao
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kometani Reo
Department of Engineering Synthesis, The University of Tokyo
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Houlet Lionel
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nonaka Keiichiro
NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan
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Yamaguchi Hiroshi
NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamaguchi Hiroshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Santos Paulo
Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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NAGASE Masao
NTT Basic Research Laboratories, NTT Corporation
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Ishihara Sunao
The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Ishihara Sunao
The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Ishihara Sunao
Department of Engineering Synthesis, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
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Ishihara Sunao
Department of Engineering Synthesis, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Maruta Yuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Mizutani Wataru
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Koechlin Charlie
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Takeda Kyozaburo
Department of Electrical Engineering and Bioscience, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Inokawa Hiroshi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Hirayama Yoshiro
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Azehara Hiroaki
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Azehara Hiroaki
Nanotechnology Research Center, Research Institute for Electronic Science (RIES), Hokkaido University, Sapporo 001-0021, Japan
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Nakamatsu Kenichiro
LASTI, Graduate School of Science, University of Hyogo, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
著作論文
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Silicon devices and materials)
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Electron devices)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction
- Strongly Enhanced Sensitivity of Piezoresistive Cantilevers by Utilizing the Superconducting Proximity Effect
- Optical Tuning of Coupled Micromechanical Resonators
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- 27aVE-11 Investigating the activation barrier between the stable phases of oscillation in an electromechanical resonator
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
- Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Electromechanical displacement detection with an on-chip high electron mobility transistor amplifier (Special issue: Microprocesses and nanotechnology)
- Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
- 22pTG-12 Self-cooling of a Micro-mechanical Resonator by Lorentz Force
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Feedback Cooling of a Strained GaAs Micromechanical Beam Resonator
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Imaging of Local Charge Density in an InAs/GaAs Two-Dimensional Heterostructure by Scanning Tunneling Microscopy
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Field-Effect Transistor with Deposited Graphite Thin Film
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- Modulation of Young's Modulus of Poly(methyl methacrylate) Nanobeam Due to Electron-Beam Exposure
- Superconductivity in Tungsten-Carbide Nanowires Deposited from the Mixtures of W(CO)
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio