Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
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概要
- 論文の詳細を見る
We fabricated an electron-emission cathode with a Si/SiO2/Si structure using metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication technology. Electrons travel from an electron-source Si layer to a thin polycrystalline Si (poly-Si) through a thin SiO2 and some of them with high energy, i.e., hot electrons, are emitted from the poly-Si surface. By utilizing an electron-inversion layer as the electron source, high efficiency and stability of electron emission were achieved. Material decomposition at a depth of a few nanometers was also demonstrated using a low-energy-electron irradiation from the cathode operated in a low vacuum condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
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Nagase Masao
Ntt Basic Research Laboratories
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Yamaguchi Toru
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
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Yamaguchi Hiroshi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nagase Masao
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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