Field-Effect Transistor with Deposited Graphite Thin Film
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概要
- 論文の詳細を見る
By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On–off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Nagase Masao
Ntt Basic Research Laboratories
-
Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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TORIMITSU Keiichi
NTT Basic Research Laboratories
-
Goto Touichiro
Ntt Basic Res. Lab. Kanagawa Jpn
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Hirono Shigeru
Ntt Afty Corporation
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Inokawa Hiroshi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Nagase Masao
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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