Molecular-Mediated Single-Electron Devices Operating at Room Temperature
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概要
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We report the electrical characteristics of gold nanogap devices modified by conjugated molecules with thiol endgroups. Gold nanogap electrodes with a nominal gap distance of between 1–2 nm were fabricated by double oblique deposition from opposite directions. The electrodes were then immersed in 4,4$'$-$ p$-terphenyldithiol (TPDT) solutions to enhance conductance. Using the substrate as a gate electrode, we observed a large Coulomb diamond at room temperature with a charging energy as large as 0.25 eV. The characteristics of the device can be explained on the basis of a multi-metallic-island system. It is considered that ultra small gold islands are formed during the metal deposition and that the molecules bridging metallic islands and electrodes work as tunnel junctions.
- 2006-05-15
著者
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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SUMITOMO Koji
NTT Basic Research Laboratories
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TORIMITSU Keiichi
NTT Basic Research Laboratories
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Goto Touichiro
Ntt Basic Res. Lab. Kanagawa Jpn
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Aoki Takafumi
Graduate School Of Information Sciences Tohoku University
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Degawa Katsuhiko
Graduate School Of Information Sciences Tohoku University
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FURUKAWA Kazuaki
NTT Basic Research Laboratories
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Nakashima Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Inokawa Hiroshi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Degawa Katsuhiko
Graduate School of Information Sciences, Tohoku University, Aoba-yama 05, Sendai 980-8579, Japan
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Sumitomo Koji
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Torimitsu Keiichi
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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