Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
We describe a method for evaluating thermal–mechanical vibration amplitude by means of analysis of scanning electron microscopy images. The samples used were carbon nanopillars of different heights grown by focused-ion-beam-induced chemical vapor deposition. The secondary electron yield profile of carbon nanopillars excited by thermal noise is modeled, and vibration amplitude is determined by fitting the modeled profile to the experimental profile. The Young's modulus of carbon nanopillars is deduced from the determined amplitude. Furthermore, the density of carbon nanopillars is estimated from the deduced Young's modulus and the measured resonant frequency. The obtained Young's moduli and densities range from 51 to 78 GPa and from 2500 to 3500 kg/m3, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
-
Nagase Masao
Ntt Basic Research Laboratories
-
YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
-
Ishihara Sunao
The University Of Tokyo
-
Tamaru Kojiro
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Nonaka Keiichiro
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Ishihara Sunao
The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Nagase Masao
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Warisawa Shin'ichi
The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
関連論文
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Silicon devices and materials)
- Keynote address: Challenge for electromechanical logic systems using compound semiconductor heterostructures (Electron devices)
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1)
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction
- Strongly Enhanced Sensitivity of Piezoresistive Cantilevers by Utilizing the Superconducting Proximity Effect
- Line-Edge Roughness: Characterization and Material Origin
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Optical Tuning of Coupled Micromechanical Resonators
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Threshold Voltage of Si Single-Electron Transistor
- Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
- Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
- 27aVE-11 Investigating the activation barrier between the stable phases of oscillation in an electromechanical resonator
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
- Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Flexible Nanofabrication in Three-Dimensional Electron-Beam Lithography Enhanced by Suppression of Proximity Effect
- Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Electromechanical displacement detection with an on-chip high electron mobility transistor amplifier (Special issue: Microprocesses and nanotechnology)
- Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
- 22pTG-12 Self-cooling of a Micro-mechanical Resonator by Lorentz Force
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Resist Coating on Vertical Side Faces Using Conventional Spin Coating for Creating Three-Dimensional Nanostructures in Semiconductors
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Feedback Cooling of a Strained GaAs Micromechanical Beam Resonator
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
- Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Imaging of Local Charge Density in an InAs/GaAs Two-Dimensional Heterostructure by Scanning Tunneling Microscopy
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Field-Effect Transistor with Deposited Graphite Thin Film
- Threshold Voltage of Si Single-Electron Transistor
- Line-Edge Roughness: Characterization and Material Origin
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- Modulation of Young's Modulus of Poly(methyl methacrylate) Nanobeam Due to Electron-Beam Exposure
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology