Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
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概要
- 論文の詳細を見る
This paper describes the electrodeposition characteristics of an organic insulator film on a gold surface. In the electrodeposition, there are two reaction patterns depending on the solution temperature. Below around 30°C, the film thickness saturates regardless of deposition time after it rapidly increases. On the other hand, above around 30°C, the film thickness gradually increases with time and does not saturate. Using the solution temperature of 30°C, the organic dielectric was deposited to coat microelectromechanical-system structures. The deposition was confirmed to occur only on the gold electrode to which a voltage was applied. The fabricated structures with the coated electrodes were protected from the electrical shorts between the actuator and the gold electrode, even though pull-in occurred.
- 社団法人 電気学会の論文
- 2006-01-01
著者
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Nagase Masao
Ntt Basic Research Laboratories
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Sato Norio
Ntt Corp. Kanagawa Jpn
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SAKATA Tomomi
NTT Microsystem Integration Laboratories
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ISHII Hiromu
NTT Microsystem Integration Laboratories
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MACHIDA Katsuyuki
NTT Microsystem Integration Laboratories
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YANO Masaki
NTT Advanced Technology Corporation, NTT Corporation
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OKABE Yuichi
NTT Microsystem Integration Labs.
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SATO Norio
NTT Microsystem Integration Labs.
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KAMEI Toshikazu
NTT Advanced Technology Corp.
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KUDOU Kazuhisa
NTT Advanced Technology Corp.
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MACHIDA Katsuyuki
NTT Advanced Technology Corporation
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Yano Masaki
Ntt Advanced Technology Corporation
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Kudou Kazuhisa
Ntt Advanced Technology Corporation
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Sato Norio
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Sahri N
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ishii Hiromu
Ntt Microsystem Integration Laboratories Ntt Corporation
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Machida K
Ntt Advanced Technology Corporation
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Kamei Toshikazu
Ntt Advanced Technology Corporation
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Yano Masaki
NTT Advanced Technology Corp.
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Okabe Yuichi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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NAGASE Masao
NTT Basic Research Labs.
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