Microfabrication Technology for Millimeter-Wave Photonic Systems on Si

概要

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A practical method for the full-wafer integration of wafer-bonded uni-traveling carrier photodiodes (UTC-PDs) with gold multilevel interconnections on a Si substrate is described with the focus on the fabrication process. The aim of this work is to show how to produce high-performance Si-based optical-to-electrical conversion modules that will operate in the millimeter-wave region. A damascene process produced multiple levels of thick gold interconnections with a feature size in a range over 10 μm. It involved processing a photosensitive organic polymer as the interlayer dielectric and chemical mechanical polishing that removed the electroplated gold at a high rate. This was achieved by restricting the area to be polished and adding hydrogen peroxide to the conventional KIO3-based slurry. The mechanism responsible for this acceleration was analyzed by x-ray photoelectron spectroscopy. The coplanar waveguide produced with this damascene process achieved low-loss transmission of millimeter-waves generated by each wafer-bonded UTC-PD. An electro-optic sampling technique confirmed its excellent low-loss millimeter-wave transmission characteristics.
社団法人電気学会の論文
2004-04-01