Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
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概要
- 論文の詳細を見る
A technique for cleaning a gold surface with a dry process is described for the fabrication of microelectromechanical system (MEMS) devices. Thermal desorption spectroscopy (TDS) analysis of a gold surface exposed to reactive oxygen revealed that annealing causes oxygen to desorb from the gold oxide. To examine the effectiveness of dry-process surface cleaning, the surfaces were annealed in a vacuum, with nitrogen as an inert ambient, and hydrogen as a reductive ambient. For the annealing in a vacuum and nitrogen ambient, a temperature of over 260 °C is necessary for the oxide removal. Annealing in hydrogen ambient drastically lowers the cleaning temperature from 260 to 60 °C.
- 2012-06-25
著者
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Nagase Masao
Ntt Basic Research Laboratories
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SAKATA Tomomi
NTT Microsystem Integration Laboratories
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ISHII Hiromu
NTT Microsystem Integration Laboratories
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MACHIDA Katsuyuki
NTT Advanced Technology Corporation
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Sato Norio
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Kuwabara Kei
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ono Kazuyoshi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Takagahara Kazuhiko
NTT Microsystem Integration Laboratories, Atsugi, Kanagawa 243-0198, Japan
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Sato Norio
NTT Microsystem Integration Laboratories, Atsugi, Kanagawa 243-0198, Japan
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Machida Katsuyuki
NTT Advanced Technology Corp.
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Machida Katsuyuki
NTT Advanced Technology Corporation, Atsugi, Kanagawa 243-0124, Japan
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Nagase Masao
NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan
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