Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
スポンサーリンク
概要
- 論文の詳細を見る
The three dimensional shapes and sizes of the embedded Si nanostructures in Si single-electron transistors (SETs) are observed by using microscopic methods, scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The width of the Si wire in the SET whose conductance oscillations are observed at 25 K is in the range of 7–15 nm measured by SEM. The height of the wire is estimated to be 5–10 nm by AFM. The size of Si wire is small enough to produce the potential barrier caused by the quantum mechanical effect. The effective length of the single-electron island is determined from the relationship between the gate capacitance and the length of the Si wire. The effective length is 23 nm shorter than the Si wire length. The distortion in the Si wire in SET is evaluated from the high-resolution image of TEM. The length of the distorted region is almost the same as the effective length of the single-electron island. The distortion will produce the potential well in the Si wire. Microscopic observations suggested the existence of potential barriers caused by the quantum mechanical effect and that of the potential well originated from the distortion in the Si wire of SET devices, which agrees with the theoretical model of Si SETs fabricated using pattern-dependent oxidation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
-
Nagase Masao
Ntt Basic Research Laboratories
-
Horiguchi Seiji
Ntt Basic Research Laboratories
-
Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
-
Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
-
Horiguchi Seiji
NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan
-
Nagase Masao
NTT Basic Research Labs., NTT Corporation, 3-1 Morinosato-wakamiya, Atsugi 243-0198, Japan
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
- Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
- A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Single-Electron Detection in Si-Wire Transistors at Room Temperature
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
- Line-Edge Roughness: Characterization and Material Origin
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Threshold Voltage of Si Single-Electron Transistor
- Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
- Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
- Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
- Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
- Phonon-Limited Electron Mobility in Ultra-Thin SOI MOSFETs
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Electrical Characterization of Terphenyl-Based Molecular Devices
- Mechanism of Single-Charge Detection using Electron-Hole System in Si-wire Transistors
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Single-Electron Stochastic Resonance Using Si Nanowire Transistors
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
- Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
- Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
- Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Field-Effect Transistor with Deposited Graphite Thin Film
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Threshold Voltage of Si Single-Electron Transistor
- Line-Edge Roughness: Characterization and Material Origin
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
- Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology