A Capacitive Sensing Scheme for Control of Movable Element with Complementary Metal–Oxide–Semiconductor Microelectoromechanical-Systems Device
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we describe a new capacitive-sensing scheme that detects the displacement of a movable structure for the control of a microelectoromechanical-systems (MEMS) device stacked on a complementary metal–oxide–semiconductor (CMOS) LSI. The problem is that the small capacitance of the air gap between the movable element and a sensor plate needs to be detected in spite of the large parasitic capacitance caused by LSI interconnections. The solution is a sensing circuit that features a shield plate and a ramp detection circuit. The shield plate separates the sensed capacitance from the parasitic capacitance. A ramp detection circuit enhances the detection sensitivity using a gradient signal generated by the parasitic capacitance. To check the effectiveness of the scheme, a sensing circuit and a MEMS variable capacitor were fabricated in a 0.6-μm CMOS process and a MEMS process. This scheme enhanced the sensitivity, which is the ratio of the output voltage to the sensed capacitance, by a factor of six. These results demonstrate that this scheme is suitable for the control of a CMOS-MEMS device.
- 2008-05-25
著者
-
Shigematsu Satoshi
Ntt Microsystem Integration Lab. Kanagawa Jpn
-
SHIMAMURA Toshishige
NTT Microsystem Integration Laboratories
-
MORIMURA Hiroki
NTT Microsystem Integration Laboratories
-
MACHIDA Katsuyuki
NTT Advanced Technology Corporation
-
Sato Norio
Ntt Microsystem Integration Lab. Kanagawa Jpn
-
Kuwabara Kei
Ntt Microsystem Integration Laboratories Ntt Corporation
-
Terada Jun
Ntt Microsystem Integration Laboratories Ntt Corp.
-
Ugajin Mamoru
Ntt Microsystem Integration Laboratories
-
Kuwabara Kei
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Shigematsu Satoshi
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sato Norio
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Shimamura Toshishige
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Terada Jun
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Machida Katsuyuki
NTT Advanced Technology Corp.
-
Machida Katsuyuki
NTT Advanced Technology Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Morimura Hiroki
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- A1-V Cyclic A/D Converter Using FD-SOI Sample/Hold Circuits for Sensor Networks(Analog, Low-Power LSI and Low-Power IP)
- Novel Packaging Technology for Microelectromechanical-System Devices
- An Adaptive Fingerprint-Sensing Scheme for a User Authentication System with a Fingerprint Sensor LSI(Integrated Electronics)
- Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
- Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
- Thick Au High-Q Inductor and Its Chip-on-Chip Bonding on an RF IC for Various Frequencies
- RF-MEMS Switch Structure for Low-Voltage Actuation and High-Density Integration
- Novel Structure and Fabrication Process for Integrated RF Microelectromechanical-System Technology
- Electrodeposition of Organic Dielectric Film and Its Application to Vibrational Microelectromechanical System Devices
- Integrated RF-MEMS Technology with Wafer-Level Encapsulation
- Characteristics of Fingerprint Sensing on Capacitive Fingerprint Sensor LSIs with a Grounded Wall Structure
- Advanced Spin Coating Film Transfer and Hot-Pressing Process for Global Planarization with Dielectric-Material-Viscosity Control
- Evaluation of Sensitivity on a Capacitive Fingerprint Sensor LSI with a Grounded Wall Structure
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Logic and Analog Test Schemes for a Single-Chip Pixel-Parallel Fingerprint Identification LSI(Image Sensor/Vision Chip,VLSI Technology toward Frontiers of New Market)
- Fingerprint Image Enhancement and Rotation Schemes for a Single-Chip Fingerprint Sensor and Identifier(Electronic Circuits)
- A 2.4-GHz PLL Synthesizer for a 1-V Bluetooth RF Transceiver(Analog Circuit and Device Technologies)
- A Sealing Technique for Stacking MEMS on LSI Using Spin-Coating Film Transfer and Hot Pressing
- Monolithic integration fabrication process of thermoelectric and vibrational devices for microelectromechanical system power generator
- 8-mW,1-V,100-Msample/s,6-bit A/D Converter Using a Latched Comparator Operating in the Triode Region
- A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI(Analog Circuit and Device Technologies)
- Copper Damascene Interconnection with Tungsten Silicon Nitride Diffusion Barrier Formed by Electron Cyclotron Resonance Plasma Nitridation
- A 6-bit A/D Converter for MEMS-control circuit
- A New Fabrication Process for Low-Loss Millimeter-Wave Transmission Lines on Silicon
- Effect of Ground-Wall Structure in Capacitive Fingerprint Sensor on Electrostatic Discharge Tolerance
- Pixel-Parallel Image-Matching Circuit Schemes for a Single-Chip Fingerprint Sensor and Identifier(Electronic Circuits)
- Fingerprint Identification System on a Single Chip Based on Advanced Circuit and Device Technologies
- Microfabrication Technology for Millimeter-Wave Photonic Systems on Si
- A Capacitive Sensing Scheme for Control of Movable Element with Complementary Metal–Oxide–Semiconductor Microelectoromechanical-Systems Device
- Conformal Coating of Organic Dielectric Film on Gold Electrodes in Microelectromechanical System Devices by Electrodeposition
- A Sub-0.5V Differential ED-CMOS/SOI Circuit with Over-1-GHz Operation(Digital, Low-Power LSI and Low-Power IP)
- The Influence of Stud Bumping above the MOSFETs on Device Reliability(Special Section on Reliability Theory and Its Applications)
- Stress-Induced Device Degradation Due to Die-Attachment Process after Area Bump Formation
- Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation
- Ubiquitous User Authentication System with Wireless Battery-Powered Fingerprint Identification Module
- An Injection-Controlled 10-Gb/s Burst-Mode CDR Circuit for a 1G/10G PON System
- A 5th-Order SC Complex BPF Using Series Capacitances for Low-IF Narrowband Wireless Receivers
- Design and Performance of a Sub-Nano-Ampere Two-Stage Power Management Circuit in 0.35-μm CMOS for Dust-Size Sensor Nodes
- A 1-Mbps 1.6-μA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
- Surface Cleaning of Gold Structure by Annealing during Fabrication of Microelectromechanical System Devices
- Operation of Ultra-Low Leakage Regulator Circuits with SOI and Bulk Technologies for Controlling Wireless Transceivers
- Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication
- Third-Harmonic Envelope Feedback Method for High-Efficiency Linear Power Amplifiers
- Third-Harmonic Envelope Feedback Method for High-Efficiency Linear Power Amplifiers
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
- Characterization of Air-Gap Sealing with Organic Dielectric Using Spin-Coating Film Transfer and Hot-Pressing Technology
- Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester
- Effect of Ground-Wall Structure in Capacitive Fingerprint Sensor on Electrostatic Discharge Tolerance
- The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors
- Novel Packaging Technology for Microelectromechanical-System Devices
- Spin Coating Film Transfer and Hot-Pressing System for Uniform Dielectric Formation and Its Application to Porous Low-$k$ Film Formation
- Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
- A Sealing Technique for Stacking MEMS on LSI Using Spin-Coating Film Transfer and Hot Pressing
- Fabrication of Optical Microelectromechanical-System Switches Having Multilevel Mirror-Drive Electrodes
- Peel-Off Characteristics at Interface between Base Film and Dielectrics with Spin-Coating Film Transfer and Hot-Pressing Technology
- Force-Sensing Scheme for Small Mechanical Signals in Complementary Metal Oxide Semiconductor Microelectromechanical System Fingerprint Sensor
- Thick-Dielectric Formation and MOSFET Reliability with Spin-Coating Film Transfer and Hot-Pressing Technique for Seamless Integration Technology
- Monolithic Integration Fabrication Process of Thermoelectric and Vibrational Devices for Microelectromechanical System Power Generator
- Electrodeposition of Organic Dielectric Film and Its Application to Vibrational Microelectromechanical System Devices
- Novel Sensor Structure and Its Evaluation for Integrated Complementary Metal Oxide Semiconductor Microelectromechanical Systems Accelerometer
- A 280-MHz CMOS Intra-Symbol Intermittent RF Front End for Adaptive Power Reduction of Wireless Receivers According to Received-Signal Intensity in Sensor Networks
- Novel Sensor Structure and Its Evaluation for Integrated Complementary Metal Oxide Semiconductor Microelectromechanical Systems Accelerometer