Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
スポンサーリンク
概要
- 論文の詳細を見る
- 2003-06-01
著者
-
Yonehara Takao
Device R&d Headquarters Canon Inc.
-
SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
-
Sato Nobuhiko
Eltran Business Center Canon Inc.
-
Okabe Takehito
Eltran Business Center Canon Inc.
-
Kodate Junichi
Ntt Microsystem Integration Laboratories Ntt Corporation
-
UGAJIN Mamoru
NTT Microsystem Integration Laboratories, NTT Corporation
-
TSUKAHARA Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation
-
DOUSEKI Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation
-
OHMI Kazuaki
Technology Management Headquarters, Canon Inc.
-
Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
-
Ohmi Kazuaki
Technology Management Headquarters Canon Inc.
-
Ugajin Mamoru
Ntt Microsystem Integration Laboratories Ntt Corporation
-
Tsukahara Tsuneo
Ntt Microsystem Integration Laboratories Ntt Corporation
-
Kodate Junichi
Ntt Microsystem Integration Laboratories
-
Ugajin Mamoru
Ntt Microsystem Integration Laboratories
-
Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
-
Yonehara Takao
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
関連論文
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
- Thick Au High-Q Inductor and Its Chip-on-Chip Bonding on an RF IC for Various Frequencies
- RF-MEMS Switch Structure for Low-Voltage Actuation and High-Density Integration
- Novel Structure and Fabrication Process for Integrated RF Microelectromechanical-System Technology
- Integrated RF-MEMS Technology with Wafer-Level Encapsulation
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Defect Engineering in Epitaxial Layers over Porous Silicon for ELTRAN^【○!R】 SOI Wafers
- Extremely Low Si Etching (
- Current Progress in Epitaxial Layer Transfer (ELTRAN^[○!R]) (Special Issue on SOI Devices and Their Process Technologies)
- Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si
- Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-Back of Porous Si
- Extremely High Selective Etching of Porous Si for Single Etch-Stop Bond-and-Etch-Back Silicon-on-Insulator
- A 2.4-GHz PLL Synthesizer for a 1-V Bluetooth RF Transceiver(Analog Circuit and Device Technologies)
- Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System(Low-Power System LSI, IP and Related Technologies)
- A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI(Analog Circuit and Device Technologies)
- A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX(Special Section on Analog Circuit Techniques and Related Topics)
- Sub-1-V Power-Supply System with Variable-Stage SC-Type DC-DC Converter Scheme for Ambient Energy Sources(Analog, Low-Power LSI and Low-Power IP)
- A Capacitive Sensing Scheme for Control of Movable Element with Complementary Metal–Oxide–Semiconductor Microelectoromechanical-Systems Device
- A Sub-0.5V Differential ED-CMOS/SOI Circuit with Over-1-GHz Operation(Digital, Low-Power LSI and Low-Power IP)
- Fabrication of a Microelectromechanical System Mirror Array and Its Drive Electrodes for Low Electrical Interference in Wavelength-Selective Switches
- A 5th-Order SC Complex BPF Using Series Capacitances for Low-IF Narrowband Wireless Receivers
- Design and Performance of a Sub-Nano-Ampere Two-Stage Power Management Circuit in 0.35-μm CMOS for Dust-Size Sensor Nodes
- A 1-Mbps 1.6-μA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
- Operation of Ultra-Low Leakage Regulator Circuits with SOI and Bulk Technologies for Controlling Wireless Transceivers
- Third-Harmonic Envelope Feedback Method for High-Efficiency Linear Power Amplifiers
- Third-Harmonic Envelope Feedback Method for High-Efficiency Linear Power Amplifiers
- Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester
- Practical High-Resistivity Silicon-on-Insulator Solution for Spiral Inductors in Radio-Frequency Integrated Circuits
- Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si
- A 280-MHz CMOS Intra-Symbol Intermittent RF Front End for Adaptive Power Reduction of Wireless Receivers According to Received-Signal Intensity in Sensor Networks