Sato Nobuhiko | Eltran Business Center Canon Inc.
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概要
関連著者
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
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Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Yonehara Takao
Eltran Project R&d Headquarters Canon Inc.
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Yonehara Takao
Eltran Business Center Canon Inc.
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Yonehara Takao
Device R&d Headquarters Canon Inc.
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Sato N
Eltran Project Device Development Center Canon Inc.
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Sato Norihiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Okabe Takehito
Eltran Business Center Canon Inc.
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Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
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Yonehara T
Canon Inc. Kanagawa Jpn
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Nakayama Jun
Department Of Pathology Shinshu University School Of Medicine:institute Of Organ Transplants Reconst
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NAKAYAMA Jun
ELTRAN project, Canon Inc.
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Nakayama Jun
Department Of Laboratory Medicine Shinshu University School Of Medicine Nagano
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Sato N
Department Of Electronic Engineering Tohoku University
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Tsukahara Tsuneo
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate Junichi
Ntt Microsystem Integration Laboratories
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Yonehara Takao
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Kodate Junichi
Ntt Microsystem Integration Laboratories Ntt Corporation
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UGAJIN Mamoru
NTT Microsystem Integration Laboratories, NTT Corporation
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TSUKAHARA Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation
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DOUSEKI Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation
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OHMI Kazuaki
Technology Management Headquarters, Canon Inc.
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Ohmi Kazuaki
Technology Management Headquarters Canon Inc.
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Ito Masataka
Eltran Project Canon Inc.
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories
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Hayashi Yasuhiko
Department Of Cardiovascular Physiology And Medicine Hiroshima University Graduate School Of Biomedi
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Hayashi Y
Hadepartment Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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AGATA Yasunori
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Agata Y
Nagoya Inst. Technol. Nagoya Jpn
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Agata Yasunori
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yamagata Kenji
Eltran Project Device Development Center Canon Inc.
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Sato Nobuhiko
Eltran Project R&d Headquarters Canon Inc.
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Ishii Shigeaki
Eltran Project Canon Inc.
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Soga Takashi
Central Research Laboratory Hitachi Limited
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MATSUMURA Satoshi
ELTRAN project, Canon Inc.
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SAKAGUCHI Kiyofumi
ELTRAN Project, Device Development Center, Canon Inc.
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ATOJI Tadashi
ELTRAN Project, Device Development Center, Canon Inc.
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FUJIYAMA Yasutomo
ELTRAN Project, Device Development Center, Canon Inc.
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SAKAGUCHI Kiyofumi
Device Development Center, R&D Headquarters, Canon Inc.
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YAMAGATA Kenji
Device Development Center, R&D Headquarters, Canon Inc.
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NAKAYAMA Jun
Device Development Center, R&D Headquarters, Canon Inc.
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Hasegawa Y
Asahi Technical Lab. Co. Shizuoka Jpn
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Kodate J
Ntt Telecommunications Energy Laboratories
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Atoji Tadashi
Eltran Project Device Development Center Canon Inc.
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Fujiyama Yasutomo
Eltran Project Device Development Center Canon Inc.
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Sakaguchi K
Eltran Project Device Development Center Canon Inc.
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Sakaguchi Kiyofumi
Eltran Business Center Canon Inc.
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Hayashi Yasuhiko
Department Of Cardiology Tsuchiya General Hospital
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Umeno M
Nagoya Inst. Technology
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Tsukahara T
Ntt Microsystem Integration Laboratories Ntt Corporation
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Matsumura Satoshi
Eltran Project Canon Inc.
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Hayashi Yasuhiko
Department Of Cardiology Cardiovascular Center Tsuchiya General Hospital
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Kodate J
Ntt Microsystem Integration Laboratories Ntt Corporation
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Tsukahara Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Fujiyama Yasutomo
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Douseki Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamagata Kenji
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Nakayama Jun
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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YONEHARA Takao
Device R&D Headquarters, Canon Inc.
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Okabe Takehito
ELTRAN Development Center, Canon Inc., 9-22-5 Tamura, Hiratsuka, Kanagawa 254-0013, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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Sakaguchi Kiyofumi
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
著作論文
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Defect Engineering in Epitaxial Layers over Porous Silicon for ELTRAN^【○!R】 SOI Wafers
- Extremely Low Si Etching (
- Current Progress in Epitaxial Layer Transfer (ELTRAN^[○!R]) (Special Issue on SOI Devices and Their Process Technologies)
- Practical High-Resistivity Silicon-on-Insulator Solution for Spiral Inductors in Radio-Frequency Integrated Circuits
- Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si