Current Progress in Epitaxial Layer Transfer (ELTRAN^[○!R]) (Special Issue on SOI Devices and Their Process Technologies)
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概要
- 論文の詳細を見る
The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.
- 1997-03-25
著者
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Yonehara Takao
Eltran Project R&d Headquarters Canon Inc.
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Sato N
Eltran Project Device Development Center Canon Inc.
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SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
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Sato Norihiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Yamagata Kenji
Eltran Project Device Development Center Canon Inc.
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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Yonehara T
Canon Inc. Kanagawa Jpn
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Yonehara Takao
Eltran Business Center Canon Inc.
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Nakayama Jun
Department Of Pathology Shinshu University School Of Medicine:institute Of Organ Transplants Reconst
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NAKAYAMA Jun
ELTRAN project, Canon Inc.
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SAKAGUCHI Kiyofumi
ELTRAN Project, Device Development Center, Canon Inc.
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ATOJI Tadashi
ELTRAN Project, Device Development Center, Canon Inc.
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FUJIYAMA Yasutomo
ELTRAN Project, Device Development Center, Canon Inc.
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Atoji Tadashi
Eltran Project Device Development Center Canon Inc.
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Fujiyama Yasutomo
Eltran Project Device Development Center Canon Inc.
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Sakaguchi K
Eltran Project Device Development Center Canon Inc.
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Sakaguchi Kiyofumi
Eltran Business Center Canon Inc.
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Nakayama Jun
Department Of Laboratory Medicine Shinshu University School Of Medicine Nagano
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Sato N
Department Of Electronic Engineering Tohoku University
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