Practical High-Resistivity Silicon-on-Insulator Solution for Spiral Inductors in Radio-Frequency Integrated Circuits
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概要
- 論文の詳細を見る
The effect of high-resistivity (high-$R$) silicon-on-insulator (SOI) substrates on spiral inductors in radio-frequency integrated circuits (RF ICs) has been investigated by experiment and simulation. The effect of the high-$R$ substrates on the spiral inductors saturates at a resistivity above 2–3 k$\Omega$ cm, and the resistivity must be maintained high with a thickness of about 300 μm. The resistivity dependence of the high-$R$ effect can be explained with a dielectric loss mechanism in silicon substrates. The thickness criterion of the effect can be explained with an inductor model that includes magnetically induced current in a ground plane. On the basis of experimental results and discussion, we conclude that a commercially available high-$R$ wafer with carefully designed back-end process is sufficient for obtaining the maximum effect of high-$R$ substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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Okabe Takehito
Eltran Business Center Canon Inc.
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Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
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Tsukahara Tsuneo
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate Junichi
Ntt Microsystem Integration Laboratories
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Tsukahara Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Douseki Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Okabe Takehito
ELTRAN Development Center, Canon Inc., 9-22-5 Tamura, Hiratsuka, Kanagawa 254-0013, Japan
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