Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si
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概要
- 論文の詳細を見る
We report recent qualitative advances in bonding and etch-back of silicon on insulator (SOI) using structure-sensitive selective etching of porous Si. The defect density in the epitaxial layer grown on the porous Si is lowered to 3.5×102/cm2 by raising the H2 prebake temperature in conjunction with the "preinjection technique" in which a small amount of Si is supplied during the high-temperature H2 prebake prior to epitaxial growth. H2 annealing also gives a smooth SOI surface comparable to the bulk polished wafer. Improved thickness uniformity of ±1.8% is achieved using the single wafer processing epi-reactor. The electrical characteristics are evaluated by fabricating pn-junction diode.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Yonehara Takao
Device R&d Headquarters Canon Inc.
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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SAKAGUCHI Kiyofumi
Device Development Center, R&D Headquarters, Canon Inc.
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YAMAGATA Kenji
Device Development Center, R&D Headquarters, Canon Inc.
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NAKAYAMA Jun
Device Development Center, R&D Headquarters, Canon Inc.
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Fujiyama Yasutomo
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Yamagata Kenji
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Yonehara Takao
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Nakayama Jun
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Sakaguchi Kiyofumi
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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