Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(<Special Issue>Devices and Circuits for Next Generation Multi-Media Communication Systems)
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概要
- 論文の詳細を見る
The performance of radio frequency integrated circuits (RFICs) in silicon-on-insulator (SOI) technology can be improved by using a high-resistivity SOI substrate. We investigated the correlation between substrate resistivity and the performance of a low noise amplifier (LNA) on ELTRAN(R) SOI-Epi wafers^<TM>, whose resistivity can be controlled precisely. The use of high-resistivity ELTRAN wafers improves the Q-factor of spiral inductors, and thereby increases the gain and narrows the bandwidth of the LNA. Using the high-resistivity ELTRAN wafers, we have successfully fabricated a 2.4-GHz and 5-GHz CMOS LNA in 0.35-μm SOI CMOS technology, whose process cost is lower than the latest CMOS technologies.
- 2003-06-01
著者
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Yonehara Takao
Device R&d Headquarters Canon Inc.
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SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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Okabe Takehito
Eltran Business Center Canon Inc.
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Kodate Junichi
Ntt Microsystem Integration Laboratories Ntt Corporation
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UGAJIN Mamoru
NTT Microsystem Integration Laboratories, NTT Corporation
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TSUKAHARA Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation
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DOUSEKI Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation
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OHMI Kazuaki
Technology Management Headquarters, Canon Inc.
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Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ohmi Kazuaki
Technology Management Headquarters Canon Inc.
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate J
Ntt Telecommunications Energy Laboratories
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Tsukahara T
Ntt Microsystem Integration Laboratories Ntt Corporation
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Tsukahara Tsuneo
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate Junichi
Ntt Microsystem Integration Laboratories
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Kodate J
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories
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Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Yonehara Takao
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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YONEHARA Takao
Device R&D Headquarters, Canon Inc.
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