UGAJIN Mamoru | NTT Microsystem Integration Laboratories, NTT Corporation

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著作論文

Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
A 2.4-GHz PLL Synthesizer for a 1-V Bluetooth RF Transceiver(Analog Circuit and Device Technologies)
A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI(Analog Circuit and Device Technologies)
A 5th-Order SC Complex BPF Using Series Capacitances for Low-IF Narrowband Wireless Receivers
A 1-Mbps 1.6-μA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
Operation of Ultra-Low Leakage Regulator Circuits with SOI and Bulk Technologies for Controlling Wireless Transceivers
A 280-MHz CMOS Intra-Symbol Intermittent RF Front End for Adaptive Power Reduction of Wireless Receivers According to Received-Signal Intensity in Sensor Networks

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