Kodate J | Ntt Microsystem Integration Laboratories Ntt Corporation
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概要
関連著者
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Kodate J
Ntt Telecommunications Energy Laboratories
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Tsukahara T
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate J
Ntt Microsystem Integration Laboratories Ntt Corporation
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TSUKAHARA Tsuneo
NTT Telecommunications Energy Laboratories
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KODATE Junichi
NTT Telecommunications Energy Laboratories
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Harada Mitsuru
Ntt Telecommunications Energy Laboratories
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Harada Mitsuru
Ntt Microsystem Integration Labs. Ntt Corporation
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories Ntt Corporation
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Harada M
Ntt Microsystem Integration Labs. Ntt Corporation
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Kodate Junichi
Ntt Microsystem Integration Laboratories Ntt Corporation
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UGAJIN Mamoru
NTT Microsystem Integration Laboratories, NTT Corporation
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TSUKAHARA Tsuneo
NTT Microsystem Integration Laboratories, NTT Corporation
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Tsukahara Tsuneo
Ntt Microsystem Integration Laboratories Ntt Corporation
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Kodate Junichi
Ntt Microsystem Integration Laboratories
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Ugajin Mamoru
Ntt Microsystem Integration Laboratories
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Yonehara Takao
Device R&d Headquarters Canon Inc.
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SATO Nobuhiko
ELTRAN Project, R&D Headquarters, Canon Inc.
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Sato Nobuhiko
Eltran Business Center Canon Inc.
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YAMAGISHI Akihiro
NTT Telecommunications Energy Laboratories
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Okabe Takehito
Eltran Business Center Canon Inc.
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DOUSEKI Takakuni
NTT Microsystem Integration Laboratories, NTT Corporation
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OHMI Kazuaki
Technology Management Headquarters, Canon Inc.
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Douseki Takakuni
Ntt Microsystem Integration Laboratories Ntt Corporation
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Ohmi Kazuaki
Technology Management Headquarters Canon Inc.
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Ugajin Mamoru
Ntt Telecommunications Energy Laboratories
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Sato Nobuhiko
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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Yonehara Takao
Device Development Center, R&D Headquarters, Canon Inc. 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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YONEHARA Takao
Device R&D Headquarters, Canon Inc.
著作論文
- A Low-Voltage 6-GHz-Band CMOS Monolithic LC-Tank VCO Using a Tuning-Range Switching Technique(Special Section on Analog Circuit Techniques Supporting the System LSI Era)
- Suppression of Substrate Crosstalk in Mixed-Signal Complementary MOS Circuits Using High-Resistivity SIMOX(Separation by IMplanted OXygen)Wafers
- Suppression of Substrate Crosstalk in Mixed Analog-Digital CMOS Circuits by Using High-Resistivity SIMOX Wafers
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI(Analog Circuit and Device Technologies)
- A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX(Special Section on Analog Circuit Techniques and Related Topics)