Suppression of Substrate Crosstalk in Mixed-Signal Complementary MOS Circuits Using High-Resistivity SIMOX(Separation by IMplanted OXygen)Wafers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Harada Mitsuru

  Ntt Telecommunications Energy Laboratories

• Harada Mitsuru

  Ntt Microsystem Integration Labs. Ntt Corporation

• TSUKAHARA Tsuneo

  NTT Telecommunications Energy Laboratories

• KODATE Junichi

  NTT Telecommunications Energy Laboratories

• Kodate J

  Ntt Telecommunications Energy Laboratories

• Harada M

  Ntt Microsystem Integration Labs. Ntt Corporation

• Tsukahara T

  Ntt Microsystem Integration Laboratories Ntt Corporation

• Kodate J

  Ntt Microsystem Integration Laboratories Ntt Corporation

関連論文

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• Suppression of Substrate Crosstalk in Mixed-Signal Complementary MOS Circuits Using High-Resistivity SIMOX(Separation by IMplanted OXygen)Wafers
• Suppression of Substrate Crosstalk in Mixed Analog-Digital CMOS Circuits by Using High-Resistivity SIMOX Wafers
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• 3.0 Gbit/s Wireless Links Using 120-GHz Millimeter-Wave Photonic Techniques
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• Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology (Special Issue on Ultra-High-Speed IC and LSI Technology)
• A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI(Analog Circuit and Device Technologies)
• A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX(Special Section on Analog Circuit Techniques and Related Topics)
• A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI(Special Issue on High-Performance Analog Integrated Circuits)
• Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers : Semiconductors
• Low-Power RF Circuits in SOI
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