3 to 5-GHz Si-Bipolar Quadrature Modulator and Demodulator Using a Wideband Frequency-Doubling Phase Shifter (Special Section on Analog Circuit Techniques Supporting the System LSI Era)

スポンサーリンク

概要

• 論文の詳細を見る

• A 3 to 5-GHz Si-bipolar quadraturemodulator and demodulator are described. Both feature a wideband frequency-doubling 90-degree phase shifter that has a mechanism for self-correction of phase errors caused by an original 90-degree phase-shift network at the half frequency of the carrier. Therefore, the pahse shifter produces accurate quadrature carrier signals with doubled frequency. The quadrature modulator and demodulator in 30-GHz Si bipolar technology dissipate 80 mA at a 3-V supply. Image rejection of the modulator is more than 40 dB between 3.2 to 5.2 GHz. The phase and amplitude errors of the demodulator are less than 1.5 degrees and less than 0.15 dB, respectively, between 3.5 to 5.2 GHz. Therefore, both are suitable for either direct conversion or image-rejection transceivers for 5-GHz applications.

• 社団法人電子情報通信学会の論文
• 2001-02-01

著者

• Yamada Junzo

  Ntt Telecommunications Energy Laboratories

• Yamada Junzo

  Ntt Technology Research Department

• TSUKAHARA Tsuneo

  NTT Telecommunications Energy Laboratories

関連論文

• Energy-Reduction Effect of Ultralow-Voltage MTCMOS / SIMOX Circuits Using a Graph with Equispeed and Equienergy Lines (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• A Low Power Multiplier Using Adiabatic Charging Binary Decision Diagram Circuit
• Evaluation of Soft-Error Immunity for 1-V CMOS Memory Cells with MTCMOS Technology (Special Issue on Microelectronic Test Structure)
• 3 to 5-GHz Si-Bipolar Quadrature Modulator and Demodulator Using a Wideband Frequency-Doubling Phase Shifter (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
• A Low-Voltage 6-GHz-Band CMOS Monolithic LC-Tank VCO Using a Tuning-Range Switching Technique(Special Section on Analog Circuit Techniques Supporting the System LSI Era)
• Suppression of Substrate Crosstalk in Mixed-Signal Complementary MOS Circuits Using High-Resistivity SIMOX(Separation by IMplanted OXygen)Wafers
• Suppression of Substrate Crosstalk in Mixed Analog-Digital CMOS Circuits by Using High-Resistivity SIMOX Wafers
• A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX(Special Section on Analog Circuit Techniques and Related Topics)
• A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI(Special Issue on High-Performance Analog Integrated Circuits)
• Low Voltage SOI Circuit Technology

スポンサーリンク