Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers : Semiconductors

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概要

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• The electrical characteristics of the top Si-buried oxide interface in low-dose separation by implanted oxygen (SIMOX) wafers have been investigated from high-frequency and quasi-static capacitance-voltage (C-V) measurements of the buried metal oxide semiconductor (MOS) diodes proposed here_ The structure of the interface has been also analyzed using cross-sectional transmission electron microscopy (XTEM). SIMOX wafers with an internal thermal oxidation (ITOX) process have a fixed charge density of 2.7 x 10^<10> cm^<-2> and an interface trap density of 5 x 10^9 cm^<-2> eV^<-1> . XTEM analysis revealed the undulation of the interface with ITOX is about 1 lattice. From the small fixed charge density and the smooth interface, we conclude that the strain field in the top Si-buried oxide interface is small, and comparable to that of thermal oxide-Si interface. The obtained results indicate that ITOX-SIMOX wafers are useful for the fabrication of fully depleted MOSFETs.

• 社団法人応用物理学会の論文
• 2001-09-15

著者

• OHNO Terukazu

  NTT Telecommunications Energy Laboratories

• KODATE Junichi

  NTT Telecommunications Energy Laboratories

• Takahashi Mitsutoshi

  Ntt Telecommunications Energy Laboratories

• NAKASHIMA Sadao

  NTT Telecommunications Energy Laboratories

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