Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology (Special Issue on Ultra-High-Speed IC and LSI Technology)
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概要
- 論文の詳細を見る
This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOS-FET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(Pdc・NF) ratio of 0.7/mW, which demonstrate the potential performance advantage of this technology. The C-band LNA has 0.05/mW at 5.8 GHz. The L-band amplifier had a gain of 8.5 dB at 0.5 V, which is the lowest supply voltage ever reported in Si-based LNAs. These LNAs consist of 0.25-μm nMOSFET/SIMOX, spiral inductors, and capacitors which are fabricated with a conventional digital CMOS LSI process. It demonstrates that L- and C-band RF circuits can be made on a SIMOX wafer together with large-scale digital circuits.
- 社団法人電子情報通信学会の論文
- 1999-03-25
著者
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Harada Mitsuru
Ntt Microsystem Integration Labs. Ntt Corporation
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HARADA Mitsuru
NTT System Electronics Laboratories
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TSUKAHARA Tsuneo
NTT System Electronics Laboratories
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Harada M
Ntt Microsystem Integration Labs. Ntt Corporation
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