Stress-Induced Device Degradation Due to Die-Attachment Process after Area Bump Formation

概要

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This paper presents the effect of stress on device degradation in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the die-attachment process after area bump formation. Device degradation increases with increasing stress induced by die-attachment onto an area bump sample. The degradation results mainly from interface trap generation at the Si-SiO_2 interface and also from electron trapping in the gate oxide. It is clarified that post-baking at 300℃ eliminates the degradation. However, the degradation due to the potting material appears again after post-baking. Therefore, in order to decrease the amount of device degradation due to the packaging process, both the post-baking condition and potting material need to be taken into account when a packaging technology with area bump formation is used.
社団法人応用物理学会の論文
1999-04-30