Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer

概要

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Thick on-chip interconnections with the order of 10 μm in size have been formed using a positive-type photosensitive polymer and Cu-damascene technique. Low-k interlayer- dielectric (ILD) patterns were obtained by annealing the photosensitive polymer patterns which was formed by UV exposure and developing. High-quality spiral inductors with a maximum Q of 38 and coplanar waveguides with small transmission losses were obtained with reducing high-frequency power loss in the silicon substrate by forming a 20-30-μm-thick low-k ILD layer between the silicon substrate and the interconnection. A low phase-noise performance was obtained with a voltage-controlled oscillator LSI equipped with the spiral inductor.
社団法人電子情報通信学会の論文
2002-03-01