Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the frequency dispersion in drain conductance of 0.1-$\mu$m-gate InAlAs/InGaAs high-electron mobility transisters under various bias conditions in a frequency range from 9 kHz to 500 MHz using a network analyzer. The substrate current was monitored from the backside of the wafer as a measure of the impact ionization rate. The relationship between the frequency dispersion and the impact ionization is explained quite well by the model we employed here. According to the model, the extrinsic transconductance of the device is the main factor governing the frequency dispersion of the drain conductance.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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YAMANE Yasuro
NTT Photonics Laboratories
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Umeda Yohtaro
Ntt Photonics Laboratories
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Enoki Takatomo
Ntt Photonics Laboratories
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Suemitsu Tetsuya
Ntt Photonics Laboratories
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Kosugi Toshihiko
Ntt Photonics Laboratories
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Kosugi Toshihiko
NTT Photonics Laboratories, 3-1, Morinosato-wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Suemitsu Tetsuya
NTT Photonics Laboratories, 3-1, Morinosato-wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Enoki Takatomo
NTT Photonics Laboratories, 3-1, Morinosato-wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Umeda Yohtaro
NTT Photonics Laboratories, 3-1, Morinosato-wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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