Suemitsu Tetsuya | Ntt Photonics Laboratories

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概要

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著作論文

Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Influence of Hole Accumulation on Source Resistance, Kink Effect and On-State Breakdown of InP-Based High Electron Mobility Transistors : Light Irradiation Study
InP HEMT Technology for High-Speed Logic and Communications(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets

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