Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
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概要
- 論文の詳細を見る
A delay time analysis was carried out for AlGaN/GaN high electron mobility transistors (HEMTs) with gate lengths of 120–210 nm. The influence of the large parasitics in the access region is counted out by de-embedding these parasitics from the measured parameters. From the obtained intrinsic transit delay, the effective electron velocity is estimated to be $1.86 \times 10^{7}$ cm/s. The parasitic delay is rather a major cause of delay in the devices tested. We also found that the channel charging time is not negligible even at the gate length of 120 nm, whereas it can be in the InP HEMTs with the same gate length.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-10
著者
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Shiojima Kenji
Ntt Photonics Laboratories
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Suemitsu Tetsuya
Ntt Photonics Laboratories
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Makimura Takashi
NTT Photonics Laboratories
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Suemitsu Tetsuya
NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Makimura Takashi
NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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