Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• Enoki Takatomo

  Ntt Photonics Laboratories

• WANG Chengxin

  NTT Photonics Laboratories, NTT Corporation

• MAKIMURA Takashi

  NTT Photonics Laboratories, NTT Corporation

• Makimura Takashi

  Ntt Basic Research Laboratories Ntt Corporation

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimura Takashi

  Ntt Photonics Laboratories Ntt Corporation

• Wang Chengxin

  Ntt Photonics Laboratories Ntt Corporation

• Makimura Takashi

  NTT Photonics Laboratories

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